IRFBE30SPBF
- Mfr.Part #
- IRFBE30SPBF
- Manufacturer
- Vishay
- Package/Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Datasheet
-
IRFBE30SPBF
- Description
- MOSFET N-CH 800V 4.1A D2PAK
- Stock
- 35000
- Quality
-
- Social media
-
- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 4.1A (Tc)
- Drain to Source Voltage (Vdss) :
- 800 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 78 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) :
- 125W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 2.5A, 10V
- Supplier Device Package :
- D²PAK (TO-263)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- IRFBE30SPBF
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| Global Express | |||
|---|---|---|---|
| Express Delivery | Global delivery 3-5 working days. |  |  |
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Our QC department staff would inspect and ensure all of the parts from YST ELECTRONIC are new & original in accordance with original manufacturer datasheet.
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